Corrections to “High Power X-band Monolithic GaAs PIN Balanced Limiter”

نویسندگان

چکیده

Presents corrections to the paper, (High Power X-band Monolithic GaAs PIN Balanced Limiter).

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High-Isolation W-band InP-based PIN Diode Monolithic Integrated Switches

This paper demonstrates the design of high-isolation millimeter-wave monolithic integrated switches using MOCVD-grown InGaAs/InP PIN diodes as switching devices. W-band single-pole single-throw switch using double shunt diode topology allowed significant improvement of isolation while keeping insertion loss low. The SPST switch used two InGaAs PIN diodes and demonstrated better than 35dB isolat...

متن کامل

Design of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT

In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...

متن کامل

Power-handling Capability of W-band Ingaas Pin Diode Switches

One of the most active research areas in the field of radar applications is the development of collisionavoidance systems (CAS) for automotive industry. The first prototypes of HEMT-based CAS chipsets operating at 77GHz have been recently demonstrated [1]. Such chipsets will greatly benefit from the addition of a monolithic transceiver switch, which would allow using a single antenna for both t...

متن کامل

A High Power Cross-Field Amplifier at X-Band* A

A high power cross-field amplifier is under develop ment at SLAC with the objective of providing sufficient peak power to feed a section of an X-Band (11.424 GHz) accelerator without the need for pulse compression. The CFA being designed employs a conventional distributed secondary emission cathode but a novel anode structure which consists of an array of vane resonators alternatively coupled t...

متن کامل

High power operation of an X-band gyrotwistron.

We report the first experimental verification of a gyrotwistron amplifier. The device utilized a single 9.858 0Hz, TED&z cavity, a heavily attenuated drift tube, and a long tapered output waveguide section. With a 440 kV, 200 — 245 A, 1 ps electron beam and a sharply tapered axial magnetic field, peak powers above 21 MW were achieved with a gain near 24 dB. Performance was limited by competitio...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Transactions on Power Electronics

سال: 2023

ISSN: ['1941-0107', '0885-8993']

DOI: https://doi.org/10.1109/tpel.2023.3279589